ZXTP07040DFFTA

ZXTP07040DFFTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • NO: 233-ZXTP07040DFFTA
  • Package: SOT-23-3 Flat Leads
  • Datasheet: pdf
  • Stock: 4811
  • Description: ZXTP07040DFFTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-3 Flat Leads
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 2W
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Frequency 200MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZXTP07040D
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 2W
Power - Max 1.5W
Transistor Application SWITCHING
Gain Bandwidth Product 200MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 10mA 2V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 390mV @ 150mA, 3A
Collector Emitter Breakdown Voltage 40V
Transition Frequency 200MHz
Collector Emitter Saturation Voltage -390mV
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 7V
Height 1mm
Length 3mm
Width 1.7mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

ZXTP07040DFFTA Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 300 @ 10mA 2V.The collector emitter saturation voltage is -390mV, which allows for maximum design flexibility.A VCE saturation (Max) of 390mV @ 150mA, 3A means Ic has reached its maximum value(saturated).The base voltage of the emitter can be kept at 7V to achieve high efficiency.In this part, there is a transition frequency of 200MHz.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 3A volts.

ZXTP07040DFFTA Features


the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of -390mV
the vce saturation(Max) is 390mV @ 150mA, 3A
the emitter base voltage is kept at 7V
a transition frequency of 200MHz

ZXTP07040DFFTA Applications


There are a lot of Diodes Incorporated ZXTP07040DFFTA applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

In Stock

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