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ZXTP07012EFFTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-ZXTP07012EFFTA
- Package: SOT-23-3 Flat Leads
- Datasheet:
- Stock: 5961
- Description: ZXTP07012EFFTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
- Delivery:
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| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-3 Flat Leads |
| Number of Pins | 3 |
| Weight | 48.789529mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 2W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Frequency | 250MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | ZXTP07012E |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 2W |
| Power - Max | 1.5W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 250MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 12V |
| Max Collector Current | 4A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 500 @ 10mA 2V |
| Current - Collector Cutoff (Max) | 50nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 340mV @ 80mA, 4A |
| Collector Emitter Breakdown Voltage | 12V |
| Transition Frequency | 250MHz |
| Collector Emitter Saturation Voltage | -75mV |
| Max Breakdown Voltage | 12V |
| Collector Base Voltage (VCBO) | 12V |
| Emitter Base Voltage (VEBO) | -7V |
| Continuous Collector Current | -4A |
| Height | 1mm |
| Length | 3mm |
| Width | 1.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
ZXTP07012EFFTA Overview
In this device, the DC current gain is 500 @ 10mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -75mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 340mV @ 80mA, 4A.Continuous collector voltage should be kept at -4A for high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -7V.250MHz is present in the transition frequency.Input voltage breakdown is available at 12V volts.Maximum collector currents can be below 4A volts.
ZXTP07012EFFTA Features
the DC current gain for this device is 500 @ 10mA 2V
a collector emitter saturation voltage of -75mV
the vce saturation(Max) is 340mV @ 80mA, 4A
the emitter base voltage is kept at -7V
a transition frequency of 250MHz
ZXTP07012EFFTA Applications
There are a lot of Diodes Incorporated ZXTP07012EFFTA applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
