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ZXTN619MATA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-ZXTN619MATA
- Package: 3-UDFN
- Datasheet:
- Stock: 6500
- Description: ZXTN619MATA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | 260 |
| Frequency | 165MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | ZXTN619MA |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 2.45W |
| Case Connection | COLLECTOR |
| Power - Max | 3W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 165MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 50V |
| Max Collector Current | 4A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 2A 2V |
| Current - Collector Cutoff (Max) | 25nA |
| Vce Saturation (Max) @ Ib, Ic | 320mV @ 200mA, 4A |
| Collector Emitter Breakdown Voltage | 50V |
| Transition Frequency | 165MHz |
| Collector Emitter Saturation Voltage | 320mV |
| Max Breakdown Voltage | 50V |
| Collector Base Voltage (VCBO) | 100V |
| Emitter Base Voltage (VEBO) | 7V |
| Continuous Collector Current | 4A |
| Height | 580μm |
| Length | 2.08mm |
| Width | 2.075mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 15 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 3-UDFN |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Digi-Reel® |
| Published | 2011 |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Additional Feature | HIGH RELIABILITY |
| Subcategory | Other Transistors |
| Max Power Dissipation | 2.45W |
ZXTN619MATA Overview
This device has a DC current gain of 100 @ 2A 2V, which is the ratio between the collector current and the base current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 320mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 320mV @ 200mA, 4A.Single BJT transistor is recommended to keep the continuous collector voltage at 4A in order to achieve high efficiency.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 165MHz.There is a breakdown input voltage of 50V volts that it can take.Collector current can be as low as 4A volts at its maximum.
ZXTN619MATA Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 320mV
the vce saturation(Max) is 320mV @ 200mA, 4A
the emitter base voltage is kept at 7V
a transition frequency of 165MHz
ZXTN619MATA Applications
There are a lot of Diodes Incorporated ZXTN619MATA applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
