ZXTN4004KTC

ZXTN4004KTC datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • NO: 233-ZXTN4004KTC
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: pdf
  • Stock: 4650
  • Description: ZXTN4004KTC datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Max Power Dissipation 3.8W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZXTN4004
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 3.8W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 150V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 250mV
Current - Collector Cutoff (Max) 50nA
Collector Emitter Breakdown Voltage 150V
Max Breakdown Voltage 150V
Collector Base Voltage (VCBO) 150V
Emitter Base Voltage (VEBO) 7V
hFE Min 100
Continuous Collector Current 1A
Height 6.2mm
Length 6.7mm
Width 2.39mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 1.799996g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)

ZXTN4004KTC Overview


In this device, the DC current gain is 100 @ 150mA 250mV, which is the ratio between the base current and the collector current.Single BJT transistor is essential to maintain the continuous collector voltage at 1A to achieve high efficiency.Keeping the emitter base voltage at 7V can result in a high level of efficiency.As a result, it can handle voltages as low as 150V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

ZXTN4004KTC Features


the DC current gain for this device is 100 @ 150mA 250mV
the emitter base voltage is kept at 7V

ZXTN4004KTC Applications


There are a lot of Diodes Incorporated ZXTN4004KTC applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

In Stock

Please send RFQ , we will respond immediately.