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ZXTN25100DGTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-ZXTN25100DGTA
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 4142
- Description: ZXTN25100DGTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 15 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Weight | 7.994566mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 5.3W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Frequency | 175MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | ZXTN25100D |
| Pin Count | 4 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.2W |
| Case Connection | COLLECTOR |
| Power - Max | 3W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 175MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 100V |
| Max Collector Current | 3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 10mA 2V |
| Current - Collector Cutoff (Max) | 50nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 600mA, 3A |
| Collector Emitter Breakdown Voltage | 130V |
| Transition Frequency | 175MHz |
| Collector Emitter Saturation Voltage | 200mV |
| Max Breakdown Voltage | 100V |
| Collector Base Voltage (VCBO) | 180V |
| Emitter Base Voltage (VEBO) | 7V |
| hFE Min | 300 |
| Max Junction Temperature (Tj) | 150°C |
| Height | 1.8mm |
| Length | 6.7mm |
| Width | 3.7mm |
ZXTN25100DGTA Overview
This device has a DC current gain of 300 @ 10mA 2V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is 200mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 600mA, 3A.An emitter's base voltage can be kept at 7V to gain high efficiency.In this part, there is a transition frequency of 175MHz.A breakdown input voltage of 100V volts can be used.The maximum collector current is 3A volts.
ZXTN25100DGTA Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 500mV @ 600mA, 3A
the emitter base voltage is kept at 7V
a transition frequency of 175MHz
ZXTN25100DGTA Applications
There are a lot of Diodes Incorporated ZXTN25100DGTA applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
