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ZXTN25100DFHTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-ZXTN25100DFHTA
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 8878
- Description: ZXTN25100DFHTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 11 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Weight | 7.994566mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 1.81W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Frequency | 175MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | ZXTN25100D |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.81W |
| Power - Max | 1.25W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 175MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 100V |
| Max Collector Current | 2.5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 10mA 2V |
| Current - Collector Cutoff (Max) | 50nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 330mV @ 250mA, 2.5A |
| Collector Emitter Breakdown Voltage | 100V |
| Transition Frequency | 175MHz |
| Collector Emitter Saturation Voltage | 330mV |
| Max Breakdown Voltage | 100V |
| Collector Base Voltage (VCBO) | 180V |
| Emitter Base Voltage (VEBO) | 7V |
| Height | 1mm |
| Length | 3.05mm |
| Width | 1.4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
ZXTN25100DFHTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 300 @ 10mA 2V.The collector emitter saturation voltage is 330mV, which allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 330mV @ 250mA, 2.5A.With the emitter base voltage set at 7V, an efficient operation can be achieved.The part has a transition frequency of 175MHz.As a result, it can handle voltages as low as 100V volts.Collector current can be as low as 2.5A volts at its maximum.
ZXTN25100DFHTA Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of 330mV
the vce saturation(Max) is 330mV @ 250mA, 2.5A
the emitter base voltage is kept at 7V
a transition frequency of 175MHz
ZXTN25100DFHTA Applications
There are a lot of Diodes Incorporated ZXTN25100DFHTA applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
