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ZXTN25040DFHTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-ZXTN25040DFHTA
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 665
- Description: ZXTN25040DFHTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 11 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Weight | 7.994566mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 40V |
| Max Power Dissipation | 1.25W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 4A |
| Frequency | 190MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | ZXTN25040D |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.81W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 190MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 40V |
| Max Collector Current | 4A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 10mA 2V |
| Current - Collector Cutoff (Max) | 50nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 190mV @ 400mA, 4A |
| Collector Emitter Breakdown Voltage | 40V |
| Transition Frequency | 190MHz |
| Collector Emitter Saturation Voltage | 210mV |
| Max Breakdown Voltage | 40V |
| Collector Base Voltage (VCBO) | 130V |
| Emitter Base Voltage (VEBO) | 7V |
| hFE Min | 300 |
| Continuous Collector Current | 4A |
| Height | 1mm |
| Length | 3.05mm |
| Width | 1.4mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
ZXTN25040DFHTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 300 @ 10mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 210mV, which allows maximum flexibilSingle BJT transistory in design.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 190mV @ 400mA, 4A.Continuous collector voltages of 4A should be maintained to achieve high efficiency.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.As you can see, the part has a transition frequency of 190MHz.As a result, it can handle voltages as low as 40V volts.When collector current reaches its maximum, it can reach 4A volts.
ZXTN25040DFHTA Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of 210mV
the vce saturation(Max) is 190mV @ 400mA, 4A
the emitter base voltage is kept at 7V
the current rating of this device is 4A
a transition frequency of 190MHz
ZXTN25040DFHTA Applications
There are a lot of Diodes Incorporated ZXTN25040DFHTA applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
