ZXTN25020DFLTA

ZXTN25020DFLTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • NO: 233-ZXTN25020DFLTA
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: pdf
  • Stock: 1300
  • Description: ZXTN25020DFLTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 10mA 2V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 270mV @ 450mA, 4.5A
Collector Emitter Breakdown Voltage 20V
Transition Frequency 215MHz
Collector Emitter Saturation Voltage 270mV
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 7V
Height 1mm
Length 3.05mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 20V
Max Power Dissipation 350mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 2A
Frequency 215MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZXTN25020D
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 350mW
Transistor Application SWITCHING
Gain Bandwidth Product 215MHz

ZXTN25020DFLTA Overview


In this device, the DC current gain is 300 @ 10mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 270mV.When VCE saturation is 270mV @ 450mA, 4.5A, transistor means Ic has reached transistors maximum value (saturated).The base voltage of the emitter can be kept at 7V to achieve high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 215MHz.Input voltage breakdown is available at 20V volts.The maximum collector current is 2A volts.

ZXTN25020DFLTA Features


the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of 270mV
the vce saturation(Max) is 270mV @ 450mA, 4.5A
the emitter base voltage is kept at 7V
the current rating of this device is 2A
a transition frequency of 215MHz

ZXTN25020DFLTA Applications


There are a lot of Diodes Incorporated ZXTN25020DFLTA applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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