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ZXTN25012EFLTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-ZXTN25012EFLTA
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 1075
- Description: ZXTN25012EFLTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
- Delivery:
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| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Weight | 7.994566mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Max Power Dissipation | 350mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Frequency | 260MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | ZXTN25012E |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 350mW |
| Gain Bandwidth Product | 260MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 12V |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 500 @ 10mA 2V |
| Current - Collector Cutoff (Max) | 50nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 100mA, 5A |
| Collector Emitter Breakdown Voltage | 12V |
| Transition Frequency | 260MHz |
| Collector Emitter Saturation Voltage | 300mV |
| Max Breakdown Voltage | 12V |
| Collector Base Voltage (VCBO) | 20V |
| Emitter Base Voltage (VEBO) | 7V |
| Height | 1.02mm |
| Length | 3.04mm |
| Width | 1.4mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
ZXTN25012EFLTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 500 @ 10mA 2V.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 100mA, 5A.The emitter base voltage can be kept at 7V for high efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 260MHz.Single BJT transistor can take a breakdown input voltage of 12V volts.Collector current can be as low as 2A volts at its maximum.
ZXTN25012EFLTA Features
the DC current gain for this device is 500 @ 10mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 100mA, 5A
the emitter base voltage is kept at 7V
a transition frequency of 260MHz
ZXTN25012EFLTA Applications
There are a lot of Diodes Incorporated ZXTN25012EFLTA applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
