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ZXTN2031FTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-ZXTN2031FTA
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 746
- Description: ZXTN2031FTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Weight | 7.994566mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Voltage - Rated DC | 50V |
| Max Power Dissipation | 1.2W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 5A |
| Frequency | 125MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | ZXTN2031 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.56W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 125MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 50V |
| Max Collector Current | 5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA 2V |
| Current - Collector Cutoff (Max) | 20nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 170mV @ 250mA, 5A |
| Collector Emitter Breakdown Voltage | 50V |
| Transition Frequency | 125MHz |
| Collector Emitter Saturation Voltage | 170mV |
| Max Breakdown Voltage | 50V |
| Collector Base Voltage (VCBO) | 80V |
| Emitter Base Voltage (VEBO) | 7V |
| Continuous Collector Current | 4.5A |
| Height | 1mm |
| Length | 3.05mm |
| Width | 1.4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
ZXTN2031FTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 500mA 2V.With a collector emitter saturation voltage of 170mV, it offers maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 170mV @ 250mA, 5A.Maintaining the continuous collector voltage at 4.5A is essential for high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.This device has a current rating of 5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 125MHz.This device can take an input voltage of 50V volts before it breaks down.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
ZXTN2031FTA Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 170mV
the vce saturation(Max) is 170mV @ 250mA, 5A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
a transition frequency of 125MHz
ZXTN2031FTA Applications
There are a lot of Diodes Incorporated ZXTN2031FTA applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
