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ZXTN2018FTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-ZXTN2018FTA
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 7718
- Description: ZXTN2018FTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Weight | 7.994566mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Voltage - Rated DC | 60V |
| Max Power Dissipation | 1.56W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 5A |
| Frequency | 130MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | ZXTN2018 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.56W |
| Power - Max | 1.2W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 130MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 2A 1V |
| Current - Collector Cutoff (Max) | 20nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 210mV @ 300mA, 6A |
| Collector Emitter Breakdown Voltage | 60V |
| Transition Frequency | 130MHz |
| Collector Emitter Saturation Voltage | 45mV |
| Max Breakdown Voltage | 60V |
| Collector Base Voltage (VCBO) | 140V |
| Emitter Base Voltage (VEBO) | 7V |
| Continuous Collector Current | 5A |
| Height | 1mm |
| Length | 3.05mm |
| Width | 1.4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
ZXTN2018FTA Overview
In this device, the DC current gain is 100 @ 2A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 45mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 210mV @ 300mA, 6A.Single BJT transistor is essential to maintain the continuous collector voltage at 5A to achieve high efficiency.The emitter base voltage can be kept at 7V for high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 5A.Parts of this part have transition frequencies of 130MHz.This device can take an input voltage of 60V volts before it breaks down.When collector current reaches its maximum, it can reach 5A volts.
ZXTN2018FTA Features
the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of 45mV
the vce saturation(Max) is 210mV @ 300mA, 6A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
a transition frequency of 130MHz
ZXTN2018FTA Applications
There are a lot of Diodes Incorporated ZXTN2018FTA applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
