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ZXTN2005GTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-ZXTN2005GTA
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 2963
- Description: ZXTN2005GTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Weight | 7.994566mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Voltage - Rated DC | 25V |
| Max Power Dissipation | 3W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 7A |
| Frequency | 150MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | ZXTN2005 |
| Pin Count | 4 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 3W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 150MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 25V |
| Max Collector Current | 7A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1A 1V |
| Current - Collector Cutoff (Max) | 50nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 230mV @ 150mA, 6.5A |
| Collector Emitter Breakdown Voltage | 25V |
| Transition Frequency | 150MHz |
| Max Breakdown Voltage | 25V |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 7V |
| Continuous Collector Current | 7A |
| Height | 1.65mm |
| Length | 6.7mm |
| Width | 3.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
ZXTN2005GTA Overview
In this device, the DC current gain is 300 @ 1A 1V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 7A is necessary for high efficiency.Keeping the emitter base voltage at 7V can result in a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 7A.There is a transition frequency of 150MHz in the part.Breakdown input voltage is 25V volts.Single BJT transistor is possible for the collector current to fall as low as 7A volts at Single BJT transistors maximum.
ZXTN2005GTA Features
the DC current gain for this device is 300 @ 1A 1V
the vce saturation(Max) is 230mV @ 150mA, 6.5A
the emitter base voltage is kept at 7V
the current rating of this device is 7A
a transition frequency of 150MHz
ZXTN2005GTA Applications
There are a lot of Diodes Incorporated ZXTN2005GTA applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
