ZXTN19100CZTA

ZXTN19100CZTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • NO: 233-ZXTN19100CZTA
  • Package: TO-243AA
  • Datasheet: pdf
  • Stock: 3491
  • Description: ZXTN19100CZTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Collector Emitter Breakdown Voltage 100V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage 65mV
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 200V
Emitter Base Voltage (VEBO) 7V
Continuous Collector Current 5.25A
Height 1.6mm
Length 4.6mm
Width 2.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 130.492855mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 4.46W
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 150MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZXTN19100C
Pin Count 3
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element Configuration Single
Power Dissipation 4.46W
Case Connection COLLECTOR
Power - Max 2.4W
Transistor Application SWITCHING
Gain Bandwidth Product 150MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 5.25A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 350mV @ 525mA, 5.25A

ZXTN19100CZTA Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 100mA 2V.The collector emitter saturation voltage is 65mV, which allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 350mV @ 525mA, 5.25A.A constant collector voltage of 5.25A is necessary for high efficiency.With the emitter base voltage set at 7V, an efficient operation can be achieved.There is a transition frequency of 150MHz in the part.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 5.25A volts can be achieved.

ZXTN19100CZTA Features


the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 65mV
the vce saturation(Max) is 350mV @ 525mA, 5.25A
the emitter base voltage is kept at 7V
a transition frequency of 150MHz

ZXTN19100CZTA Applications


There are a lot of Diodes Incorporated ZXTN19100CZTA applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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