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ZXTN19100CFFTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-ZXTN19100CFFTA
- Package: SOT-23-3 Flat Leads
- Datasheet:
- Stock: 9031
- Description: ZXTN19100CFFTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-3 Flat Leads |
| Number of Pins | 3 |
| Weight | 48.789529mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Max Power Dissipation | 1.5W |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | 260 |
| Frequency | 150MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | ZXTN19100C |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 16W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 150MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 100V |
| Max Collector Current | 4.5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA 2V |
| Current - Collector Cutoff (Max) | 50nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 235mV @ 450mA, 4.5A |
| Collector Emitter Breakdown Voltage | 100V |
| Transition Frequency | 150MHz |
| Collector Emitter Saturation Voltage | 60mV |
| Max Breakdown Voltage | 100V |
| Collector Base Voltage (VCBO) | 200V |
| Emitter Base Voltage (VEBO) | 7V |
| hFE Min | 200 |
| Continuous Collector Current | 4.5A |
| Height | 1mm |
| Length | 3mm |
| Width | 1.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
ZXTN19100CFFTA Overview
DC current gain in this device equals 200 @ 100mA 2V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of 60mV allows maximum design flexibility.When VCE saturation is 235mV @ 450mA, 4.5A, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is essential to maintain the continuous collector voltage at 4.5A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.A transition frequency of 150MHz is present in the part.Breakdown input voltage is 100V volts.Single BJT transistor is possible for the collector current to fall as low as 4.5A volts at Single BJT transistors maximum.
ZXTN19100CFFTA Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 60mV
the vce saturation(Max) is 235mV @ 450mA, 4.5A
the emitter base voltage is kept at 7V
a transition frequency of 150MHz
ZXTN19100CFFTA Applications
There are a lot of Diodes Incorporated ZXTN19100CFFTA applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
