ZXTN19020DZTA

ZXTN19020DZTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • NO: 233-ZXTN19020DZTA
  • Package: TO-243AA
  • Datasheet: pdf
  • Stock: 7236
  • Description: ZXTN19020DZTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Pin Count 3
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Power - Max 2.4W
Gain Bandwidth Product 160MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 7.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 100mA 2V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 375mA, 7.5A
Collector Emitter Breakdown Voltage 20V
Max Frequency 160MHz
Transition Frequency 160MHz
Collector Emitter Saturation Voltage 200mV
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 70V
Emitter Base Voltage (VEBO) 7V
Height 1.6mm
Length 4.6mm
Width 2.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 51.993025mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 4.46W
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZXTN19020D

ZXTN19020DZTA Overview


In this device, the DC current gain is 300 @ 100mA 2V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of 200mV, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 200mV @ 375mA, 7.5A.The base voltage of the emitter can be kept at 7V to achieve high efficiency.As you can see, the part has a transition frequency of 160MHz.The breakdown input voltage is 20V volts.Collector current can be as low as 7.5A volts at its maximum.

ZXTN19020DZTA Features


the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 375mA, 7.5A
the emitter base voltage is kept at 7V
a transition frequency of 160MHz

ZXTN19020DZTA Applications


There are a lot of Diodes Incorporated ZXTN19020DZTA applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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