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ZXTN19020DGTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-ZXTN19020DGTA
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 8436
- Description: ZXTN19020DGTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Weight | 7.994566mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 5.3W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | ZXTN19020D |
| Pin Count | 4 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Power - Max | 3W |
| Gain Bandwidth Product | 160MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 20V |
| Max Collector Current | 9A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 100mA 2V |
| Current - Collector Cutoff (Max) | 50nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 450mA, 9A |
| Collector Emitter Breakdown Voltage | 20V |
| Max Frequency | 160MHz |
| Transition Frequency | 160MHz |
| Collector Emitter Saturation Voltage | 250mV |
| Max Breakdown Voltage | 20V |
| Collector Base Voltage (VCBO) | 70V |
| Emitter Base Voltage (VEBO) | 7V |
| Height | 1.65mm |
| Length | 6.7mm |
| Width | 3.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
ZXTN19020DGTA Overview
DC current gain in this device equals 300 @ 100mA 2V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of 250mV ensures maximum design flexibility.When VCE saturation is 250mV @ 450mA, 9A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 7V can result in a high level of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 160MHz.Single BJT transistor can be broken down at a voltage of 20V volts.Single BJT transistor is possible for the collector current to fall as low as 9A volts at Single BJT transistors maximum.
ZXTN19020DGTA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 450mA, 9A
the emitter base voltage is kept at 7V
a transition frequency of 160MHz
ZXTN19020DGTA Applications
There are a lot of Diodes Incorporated ZXTN19020DGTA applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
