ZXTN08400BFFTA

ZXTN08400BFFTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • NO: 233-ZXTN08400BFFTA
  • Package: SOT-23-3 Flat Leads
  • Datasheet: pdf
  • Stock: 5214
  • Description: ZXTN08400BFFTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-3 Flat Leads
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 40MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZXTN08400B
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 2W
Power - Max 1.5W
Transistor Application SWITCHING
Gain Bandwidth Product 40MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 175mV @ 100mA, 500mA
Collector Emitter Breakdown Voltage 400V
Transition Frequency 40MHz
Collector Emitter Saturation Voltage 175mV
Max Breakdown Voltage 400V
Collector Base Voltage (VCBO) 450V
Emitter Base Voltage (VEBO) 7V
Height 1mm
Length 3mm
Width 1.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

ZXTN08400BFFTA Overview


DC current gain in this device equals 100 @ 50mA 5V, which is the ratio of the base current to the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 175mV, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 175mV @ 100mA, 500mA.Keeping the emitter base voltage at 7V can result in a high level of efficiency.As you can see, the part has a transition frequency of 40MHz.Breakdown input voltage is 400V volts.During maximum operation, collector current can be as low as 500mA volts.

ZXTN08400BFFTA Features


the DC current gain for this device is 100 @ 50mA 5V
a collector emitter saturation voltage of 175mV
the vce saturation(Max) is 175mV @ 100mA, 500mA
the emitter base voltage is kept at 7V
a transition frequency of 40MHz

ZXTN08400BFFTA Applications


There are a lot of Diodes Incorporated ZXTN08400BFFTA applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

In Stock

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