ZXTN04120HKTC

ZXTN04120HKTC datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • NO: 233-ZXTN04120HKTC
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: pdf
  • Stock: 4158
  • Description: ZXTN04120HKTC datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 2
Weight 200.005886mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Max Power Dissipation 1.5W
Terminal Form GULL WING
Reference Standard AEC-Q101
Number of Elements 1
Polarity NPN
Element Configuration Single
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 150MHz
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 120V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 1A 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1mA, 1A
Collector Emitter Breakdown Voltage 120V
Transition Frequency 150MHz
Max Breakdown Voltage 120V
Collector Base Voltage (VCBO) 140V
Emitter Base Voltage (VEBO) 14V
hFE Min 500
Continuous Collector Current 1.5A
Radiation Hardening No
RoHS Status ROHS3 Compliant

ZXTN04120HKTC Overview


In this device, the DC current gain is 2000 @ 1A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 1mA, 1A.A 1.5A continuous collector voltage is necessary to achieve high efficiency.If the emitter base voltage is kept at 14V, a high level of efficiency can be achieved.As you can see, the part has a transition frequency of 150MHz.Input voltage breakdown is available at 120V volts.Maximum collector currents can be below 1.5A volts.

ZXTN04120HKTC Features


the DC current gain for this device is 2000 @ 1A 5V
the vce saturation(Max) is 1.5V @ 1mA, 1A
the emitter base voltage is kept at 14V
a transition frequency of 150MHz

ZXTN04120HKTC Applications


There are a lot of Diodes Incorporated ZXTN04120HKTC applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

In Stock

Please send RFQ , we will respond immediately.