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ZXTBM322TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-ZXTBM322TA
- Package: 3-PowerSMD, Flat Leads
- Datasheet:
- Stock: 4894
- Description: ZXTBM322TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 3-PowerSMD, Flat Leads |
| Number of Pins | 322 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 20V |
| Max Power Dissipation | 3W |
| Terminal Position | QUAD |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 4.5A |
| Frequency | 140MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | ZXTBM322 |
| Pin Count | 5 |
| JESD-30 Code | S-PQFP-F3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 3W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 140MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 20V |
| Max Collector Current | 4.5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2A 2V |
| Current - Collector Cutoff (Max) | 25nA |
| Vce Saturation (Max) @ Ib, Ic | 270mV @ 125mA, 4.5A |
| Collector Emitter Breakdown Voltage | 20V |
| Transition Frequency | 140MHz |
| Collector Emitter Saturation Voltage | 210mV |
| Max Breakdown Voltage | 20V |
| Collector Base Voltage (VCBO) | 40V |
| Emitter Base Voltage (VEBO) | 7.5V |
| Height | 1mm |
| Length | 2mm |
| Width | 2mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
ZXTBM322TA Overview
In this device, the DC current gain is 200 @ 2A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This design offers maximum flexibility with a collector emitter saturation voltage of 210mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 7.5V allows for a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 4.5A.In this part, there is a transition frequency of 140MHz.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible to have a collector current as low as 4.5A volts at Single BJT transistors maximum.
ZXTBM322TA Features
the DC current gain for this device is 200 @ 2A 2V
a collector emitter saturation voltage of 210mV
the vce saturation(Max) is 270mV @ 125mA, 4.5A
the emitter base voltage is kept at 7.5V
the current rating of this device is 4.5A
a transition frequency of 140MHz
ZXTBM322TA Applications
There are a lot of Diodes Incorporated ZXTBM322TA applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
