ZXT953KTC

ZXT953KTC datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • NO: 233-ZXT953KTC
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: pdf
  • Stock: 5764
  • Description: ZXT953KTC datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 260.39037mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC -100V
Max Power Dissipation 4.2W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -5A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZXT953
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Power - Max 4.2W
Transistor Application SWITCHING
Gain Bandwidth Product 125MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 390mV
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A 1V
Current - Collector Cutoff (Max) 20nA ICBO
Vce Saturation (Max) @ Ib, Ic 390mV @ 500mA, 5A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 125MHz
Collector Emitter Saturation Voltage -335mV
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 140V
Emitter Base Voltage (VEBO) -7V
Height 2.39mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

ZXT953KTC Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 1A 1V.A collector emitter saturation voltage of -335mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).An emitter's base voltage can be kept at -7V to gain high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -5A for this device.The part has a transition frequency of 125MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 5A volts is possible.

ZXT953KTC Features


the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of -335mV
the vce saturation(Max) is 390mV @ 500mA, 5A
the emitter base voltage is kept at -7V
the current rating of this device is -5A
a transition frequency of 125MHz

ZXT953KTC Applications


There are a lot of Diodes Incorporated ZXT953KTC applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

In Stock

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