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ZXT849KTC datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-ZXT849KTC
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 6790
- Description: ZXT849KTC datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A 1V |
| Current - Collector Cutoff (Max) | 20nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 280mV @ 350mA, 7A |
| Collector Emitter Breakdown Voltage | 30V |
| Transition Frequency | 100MHz |
| Collector Emitter Saturation Voltage | 230mV |
| Max Breakdown Voltage | 30V |
| Collector Base Voltage (VCBO) | 80V |
| Emitter Base Voltage (VEBO) | 7V |
| Continuous Collector Current | 7A |
| Height | 2.39mm |
| Length | 6.73mm |
| Width | 6.22mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 15 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Weight | 350.003213mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Voltage - Rated DC | 30V |
| Max Power Dissipation | 4.2W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 7A |
| Frequency | 100MHz |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | ZXT849 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 4.2W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 100MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 30V |
| Max Collector Current | 7A |
ZXT849KTC Overview
This device has a DC current gain of 100 @ 1A 1V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 230mV, which allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 280mV @ 350mA, 7A.Single BJT transistor is essential to maintain the continuous collector voltage at 7A to achieve high efficiency.Keeping the emitter base voltage at 7V allows for a high level of efficiency.Its current rating is 7A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.There is a breakdown input voltage of 30V volts that it can take.A maximum collector current of 7A volts can be achieved.
ZXT849KTC Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of 230mV
the vce saturation(Max) is 280mV @ 350mA, 7A
the emitter base voltage is kept at 7V
the current rating of this device is 7A
a transition frequency of 100MHz
ZXT849KTC Applications
There are a lot of Diodes Incorporated ZXT849KTC applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
