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ZXT1M322TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-ZXT1M322TA
- Package: 3-PowerSMD, Flat Leads
- Datasheet:
- Stock: 3952
- Description: ZXT1M322TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Gain Bandwidth Product | 110MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 300mV |
| Max Collector Current | 4A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 2.5A 2V |
| Current - Collector Cutoff (Max) | 25nA |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 150mA, 4A |
| Collector Emitter Breakdown Voltage | 12V |
| Transition Frequency | 110MHz |
| Collector Emitter Saturation Voltage | -240mV |
| Max Breakdown Voltage | 12V |
| Collector Base Voltage (VCBO) | -20V |
| Emitter Base Voltage (VEBO) | 7.5V |
| Continuous Collector Current | -4A |
| Height | 1mm |
| Length | 2mm |
| Width | 2mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 3-PowerSMD, Flat Leads |
| Number of Pins | 322 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -12V |
| Max Power Dissipation | 3W |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -4A |
| Frequency | 110MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | ZXT1M322 |
| Pin Count | 5 |
| JESD-30 Code | S-PDSO-F3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 3W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
ZXT1M322TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 2.5A 2V.A collector emitter saturation voltage of -240mV allows maximum design flexibility.When VCE saturation is 300mV @ 150mA, 4A, transistor means Ic has reached transistors maximum value (saturated).A -4A continuous collector voltage is necessary to achieve high efficiency.The emitter base voltage can be kept at 7.5V for high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 110MHz in the part.As a result, it can handle voltages as low as 12V volts.Collector current can be as low as 4A volts at its maximum.
ZXT1M322TA Features
the DC current gain for this device is 180 @ 2.5A 2V
a collector emitter saturation voltage of -240mV
the vce saturation(Max) is 300mV @ 150mA, 4A
the emitter base voltage is kept at 7.5V
the current rating of this device is -4A
a transition frequency of 110MHz
ZXT1M322TA Applications
There are a lot of Diodes Incorporated ZXT1M322TA applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
