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ZXT13P12DE6TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-ZXT13P12DE6TA
- Package: SOT-23-6
- Datasheet:
- Stock: 9862
- Description: ZXT13P12DE6TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 |
| Number of Pins | 6 |
| Weight | 14.996898mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -12V |
| Max Power Dissipation | 1.1W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -4A |
| Frequency | 55MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | ZXT13P12D |
| Pin Count | 6 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.7W |
| Power - Max | 1.1W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 55MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 12V |
| Max Collector Current | 4A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1A 2V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 175mV @ 400mA, 4A |
| Collector Emitter Breakdown Voltage | 12V |
| Transition Frequency | 55MHz |
| Collector Emitter Saturation Voltage | -150mV |
| Max Breakdown Voltage | 12V |
| Collector Base Voltage (VCBO) | 20V |
| Emitter Base Voltage (VEBO) | 7.5V |
| Continuous Collector Current | -4A |
| Height | 1.3mm |
| Length | 3.1mm |
| Width | 1.8mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 15 Weeks |
ZXT13P12DE6TA Overview
This device has a DC current gain of 300 @ 1A 2V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is -150mV, which allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 175mV @ 400mA, 4A.For high efficiency, the continuous collector voltage must be kept at -4A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7.5V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -4A.The part has a transition frequency of 55MHz.Single BJT transistor can be broken down at a voltage of 12V volts.The maximum collector current is 4A volts.
ZXT13P12DE6TA Features
the DC current gain for this device is 300 @ 1A 2V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 175mV @ 400mA, 4A
the emitter base voltage is kept at 7.5V
the current rating of this device is -4A
a transition frequency of 55MHz
ZXT13P12DE6TA Applications
There are a lot of Diodes Incorporated ZXT13P12DE6TA applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
