ZXT13N15DE6TA

ZXT13N15DE6TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • NO: 233-ZXT13N15DE6TA
  • Package: SOT-23-6
  • Datasheet: pdf
  • Stock: 2313
  • Description: ZXT13N15DE6TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Collector Emitter Breakdown Voltage 15V
Transition Frequency 72MHz
Collector Emitter Saturation Voltage 200mV
Max Breakdown Voltage 15V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 7.5V
hFE Min 300
Continuous Collector Current 5A
Height 1.3mm
Length 3.1mm
Width 1.8mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Number of Pins 6
Weight 14.996898mg
Transistor Element Material SILICON
Manufacturer Package Identifier SOT26 (SC74R)
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 15V
Max Power Dissipation 1.1W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 5A
Frequency 72MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZXT13N15D
Pin Count 6
Number of Elements 1
Element Configuration Single
Power Dissipation 1.7W
Transistor Application SWITCHING
Gain Bandwidth Product 72MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 15V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1A 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 200mV @ 100mA, 5A

ZXT13N15DE6TA Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 300 @ 1A 2V.The collector emitter saturation voltage is 200mV, giving you a wide variety of design options.When VCE saturation is 200mV @ 100mA, 5A, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is essential to maintain the continuous collector voltage at 5A to achieve high efficiency.The emitter base voltage can be kept at 7.5V for high efficiency.The current rating of this fuse is 5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.There is a transition frequency of 72MHz in the part.The breakdown input voltage is 15V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.

ZXT13N15DE6TA Features


the DC current gain for this device is 300 @ 1A 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 100mA, 5A
the emitter base voltage is kept at 7.5V
the current rating of this device is 5A
a transition frequency of 72MHz

ZXT13N15DE6TA Applications


There are a lot of Diodes Incorporated ZXT13N15DE6TA applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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