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ZXT10P40DE6TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-ZXT10P40DE6TA
- Package: SOT-23-6
- Datasheet:
- Stock: 9676
- Description: ZXT10P40DE6TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Length | 3.1mm |
| Width | 1.8mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 15 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 |
| Number of Pins | 6 |
| Weight | 14.996898mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -40V |
| Max Power Dissipation | 1.1W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -2A |
| Frequency | 190MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | ZXT10P40D |
| Pin Count | 6 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.7W |
| Power - Max | 1.1W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 190MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 40V |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 1A 2V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 200mA, 2A |
| Collector Emitter Breakdown Voltage | 40V |
| Transition Frequency | 190MHz |
| Collector Emitter Saturation Voltage | -210mV |
| Max Breakdown Voltage | 40V |
| Collector Base Voltage (VCBO) | 40V |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | -2A |
| Height | 1.3mm |
ZXT10P40DE6TA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 180 @ 1A 2V.The collector emitter saturation voltage is -210mV, giving you a wide variety of design options.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of -2A is necessary for high efficiency.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-2A).A transition frequency of 190MHz is present in the part.This device can take an input voltage of 40V volts before it breaks down.A maximum collector current of 2A volts can be achieved.
ZXT10P40DE6TA Features
the DC current gain for this device is 180 @ 1A 2V
a collector emitter saturation voltage of -210mV
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 190MHz
ZXT10P40DE6TA Applications
There are a lot of Diodes Incorporated ZXT10P40DE6TA applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
