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ZXT10N50DE6TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-ZXT10N50DE6TA
- Package: SOT-23-6
- Datasheet:
- Stock: 602
- Description: ZXT10N50DE6TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 |
| Number of Pins | 6 |
| Weight | 14.996898mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 50V |
| Max Power Dissipation | 1.1W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 3A |
| Frequency | 165MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | ZXT10N50D |
| Pin Count | 6 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.7W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 165MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 50V |
| Max Collector Current | 3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 2A 2V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 100mA, 3A |
| Collector Emitter Breakdown Voltage | 50V |
| Transition Frequency | 165MHz |
| Collector Emitter Saturation Voltage | 225mV |
| Max Breakdown Voltage | 50V |
| Collector Base Voltage (VCBO) | 50V |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 3A |
| Height | 1.3mm |
| Length | 3.1mm |
| Width | 1.8mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
ZXT10N50DE6TA Overview
This device has a DC current gain of 100 @ 2A 2V, which is the ratio between the collector current and the base current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 225mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 100mA, 3A.In order to achieve high efficiency, the continuous collector voltage should be kept at 3A.The emitter base voltage can be kept at 5V for high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.As you can see, the part has a transition frequency of 165MHz.Single BJT transistor can be broken down at a voltage of 50V volts.A maximum collector current of 3A volts can be achieved.
ZXT10N50DE6TA Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 225mV
the vce saturation(Max) is 300mV @ 100mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 165MHz
ZXT10N50DE6TA Applications
There are a lot of Diodes Incorporated ZXT10N50DE6TA applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
