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ZXT10N20DE6TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-ZXT10N20DE6TA
- Package: SOT-23-6
- Datasheet:
- Stock: 5707
- Description: ZXT10N20DE6TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 |
| Number of Pins | 6 |
| Weight | 14.996898mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 20V |
| Max Power Dissipation | 1.1W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 3.5A |
| Frequency | 140MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | ZXT10N20D |
| Pin Count | 6 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.7W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 140MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 20V |
| Max Collector Current | 3.5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2A 2V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 100mA, 3.5A |
| Collector Emitter Breakdown Voltage | 20V |
| Transition Frequency | 140MHz |
| Collector Emitter Saturation Voltage | 190mV |
| Max Breakdown Voltage | 20V |
| Collector Base Voltage (VCBO) | 20V |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 3.5A |
| Height | 1.3mm |
| Length | 3.1mm |
| Width | 1.8mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
ZXT10N20DE6TA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 2A 2V.The collector emitter saturation voltage is 190mV, giving you a wide variety of design options.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.In order to achieve high efficiency, the continuous collector voltage should be kept at 3.5A.The emitter base voltage can be kept at 5V for high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3.5A for this device.A transition frequency of 140MHz is present in the part.Breakdown input voltage is 20V volts.Collector current can be as low as 3.5A volts at its maximum.
ZXT10N20DE6TA Features
the DC current gain for this device is 200 @ 2A 2V
a collector emitter saturation voltage of 190mV
the vce saturation(Max) is 250mV @ 100mA, 3.5A
the emitter base voltage is kept at 5V
the current rating of this device is 3.5A
a transition frequency of 140MHz
ZXT10N20DE6TA Applications
There are a lot of Diodes Incorporated ZXT10N20DE6TA applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
