ZXT10N15DE6TA

ZXT10N15DE6TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • NO: 233-ZXT10N15DE6TA
  • Package: SOT-23-6
  • Datasheet: pdf
  • Stock: 9366
  • Description: ZXT10N15DE6TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Current Rating 4A
Frequency 120MHz
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Number of Elements 1
Element Configuration Single
Power Dissipation 1.7W
Transistor Application SWITCHING
Gain Bandwidth Product 120MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 15V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 200mA 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 260mV @ 50mA, 4A
Collector Emitter Breakdown Voltage 15V
Transition Frequency 120MHz
Collector Emitter Saturation Voltage 230mV
Max Breakdown Voltage 15V
Frequency - Transition 80MHz
Collector Base Voltage (VCBO) 15V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 4A
Height 1.3mm
Length 3.1mm
Width 1.8mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Number of Pins 6
Weight 14.996898mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 15V
Max Power Dissipation 1.1W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260

ZXT10N15DE6TA Overview


DC current gain in this device equals 300 @ 200mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 230mV, which allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 260mV @ 50mA, 4A.Continuous collector voltages should be kept at 4A to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.Its current rating is 4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.As you can see, the part has a transition frequency of 120MHz.This device can take an input voltage of 15V volts before it breaks down.When collector current reaches its maximum, it can reach 4A volts.

ZXT10N15DE6TA Features


the DC current gain for this device is 300 @ 200mA 2V
a collector emitter saturation voltage of 230mV
the vce saturation(Max) is 260mV @ 50mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 120MHz

ZXT10N15DE6TA Applications


There are a lot of Diodes Incorporated ZXT10N15DE6TA applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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