ZXMP6A18DN8TA

ZXMP6A18DN8TA datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • NO: 233-ZXMP6A18DN8TA
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: pdf
  • Stock: 6934
  • Description: ZXMP6A18DN8TA datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Diodes Incorporated stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 55mOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -60V
Max Power Dissipation 2.1W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -4.6A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.1W
Turn On Delay Time 4.6 ns
Power - Max 1.8W
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 55m Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA (Min)
Input Capacitance (Ciss) (Max) @ Vds 1580pF @ 30V
Current - Continuous Drain (Id) @ 25°C 3.7A
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Rise Time 5.8ns
Drain to Source Voltage (Vdss) 60V
Fall Time (Typ) 23 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) -4.8A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 3.7A
Drain to Source Breakdown Voltage -60V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Height 1.7mm
Length 5mm
Width 4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 73.992255mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ

ZXMP6A18DN8TA  Description

This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high-efficiency, low-voltage, and power management applications.



ZXMP6A18DN8TA  Features

Low on-resistance

Fast switching speed

Low threshold

Low gate drive

Low-profile SOIC package



ZXMP6A18DN8TA  Applications

Motor drive

Disconnect switches




In Stock

Please send RFQ , we will respond immediately.