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MOSFET Dl 30V N Chnl UMOS
- Manufacturer: Diodes Incorporated
- NO: 233-ZXMN3AM832TA
- Package: -
- Datasheet:
- Stock: 565
- Description: MOSFET Dl 30V N Chnl UMOS(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Number of Pins | 8 |
| Weight | 299.994654mg |
| Packaging | Cut Tape (CT) |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 120mOhm |
| Terminal Finish | Matte Tin (Sn) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Additional Feature | LOW THRESHOLD |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 30V |
| Max Power Dissipation | 1.13W |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 3A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 10 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3W |
| Turn On Delay Time | 1.7 ns |
| Transistor Application | SWITCHING |
| Rise Time | 2.3ns |
| Drain to Source Voltage (Vdss) | 30V |
| Polarity/Channel Type | N-CHANNEL |
| Fall Time (Typ) | 2.9 ns |
| Turn-Off Delay Time | 6.6 ns |
| Continuous Drain Current (ID) | 3.7A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| Input Capacitance | 190pF |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Drain to Source Resistance | 180mOhm |
| Rds On Max | 120 mΩ |
| Height | 1mm |
| Length | 3mm |
| Width | 2mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
