Products
Manufacturer
RFQ
NEWS
ContactZXMN2A04DN8TC
MOSFET 2N-CH 20V 5.9A 8SOIC
- Manufacturer: Diodes Incorporated
- NO: 233-ZXMN2A04DN8TC
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 3000
- Description: MOSFET 2N-CH 20V 5.9A 8SOIC(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
You may place an order without registering to Chip Smart.
We strongly suggest you sign in before purchasing as you
can track your order in real time.
For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.
RFQ (Request for Quotations)It is recommended to request for quotations to get the latest
prices and inventories about the part.
Our sales will reply to
your request by email within 24 hours.
1. You'll receive an order information email in your inbox.
(Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some
extent, the sales manager is going to reconfirm the order and let you know if there
are any updates.
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Weight | 73.992255mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Additional Feature | LOW THRESHOLD |
| Subcategory | FET General Purpose Powers |
| Voltage - Rated DC | 20V |
| Max Power Dissipation | 1.25W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | 6A |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 8 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.25W |
| Turn On Delay Time | 7.9 ns |
| Power - Max | 1.8W |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 25m Ω @ 5.9A, 4.5V |
| Vgs(th) (Max) @ Id | 700mV @ 250μA (Min) |
| Input Capacitance (Ciss) (Max) @ Vds | 1880pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 22.1nC @ 5V |
| Rise Time | 14.8ns |
| Fall Time (Typ) | 14.8 ns |
| Turn-Off Delay Time | 50.5 ns |
| Continuous Drain Current (ID) | 5.9A |
| Gate to Source Voltage (Vgs) | 12V |
| Drain Current-Max (Abs) (ID) | 7.7A |
| Drain to Source Breakdown Voltage | 20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
