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MOSFET 2N/2P-CH 60V 8-SOIC
- Manufacturer: Diodes Incorporated
- NO: 233-ZXMHC6A07N8TC
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 9408
- Description: MOSFET 2N/2P-CH 60V 8-SOIC(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 17 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Weight | 73.992255mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 870mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | ZXMHC6A07 |
| Pin Count | 8 |
| Number of Elements | 4 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.36W |
| Turn On Delay Time | 1.6 ns |
| FET Type | 2 N and 2 P-Channel (H-Bridge) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 250m Ω @ 1.8A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 166pF @ 40V |
| Current - Continuous Drain (Id) @ 25°C | 1.39A 1.28A |
| Gate Charge (Qg) (Max) @ Vgs | 3.2nC @ 10V |
| Rise Time | 2.3ns |
| Drain to Source Voltage (Vdss) | 60V |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Fall Time (Typ) | 5.8 ns |
| Turn-Off Delay Time | 13 ns |
| Continuous Drain Current (ID) | 1.28A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 1.39A |
| Drain-source On Resistance-Max | 0.25Ohm |
| Drain to Source Breakdown Voltage | -60V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Height | 1.5mm |
| Length | 5mm |
| Width | 4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
