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ZX5T851ASTZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-ZX5T851ASTZ
- Package: E-Line-3
- Datasheet:
- Stock: 8271
- Description: ZX5T851ASTZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
- Delivery:
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| Parameters | |
|---|---|
| Factory Lead Time | 30 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | E-Line-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Box (TB) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Voltage - Rated DC | 60V |
| Max Power Dissipation | 1W |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 4.5A |
| Frequency | 130MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | ZX5T851A |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 130MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 4.5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 2A 1V |
| Current - Collector Cutoff (Max) | 20nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 210mV @ 200mA, 5A |
| Collector Emitter Breakdown Voltage | 60V |
| Transition Frequency | 130MHz |
| Max Breakdown Voltage | 60V |
| Collector Base Voltage (VCBO) | 150V |
| Emitter Base Voltage (VEBO) | 7V |
| hFE Min | 100 |
| Height | 4.01mm |
| Length | 4.77mm |
| Width | 2.41mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
ZX5T851ASTZ Overview
In this device, the DC current gain is 100 @ 2A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation (Max) of 210mV @ 200mA, 5A means Ic has reached its maximum value(saturated).With the emitter base voltage set at 7V, an efficient operation can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 4.5A.Parts of this part have transition frequencies of 130MHz.A breakdown input voltage of 60V volts can be used.Single BJT transistor is possible to have a collector current as low as 4.5A volts at Single BJT transistors maximum.
ZX5T851ASTZ Features
the DC current gain for this device is 100 @ 2A 1V
the vce saturation(Max) is 210mV @ 200mA, 5A
the emitter base voltage is kept at 7V
the current rating of this device is 4.5A
a transition frequency of 130MHz
ZX5T851ASTZ Applications
There are a lot of Diodes Incorporated ZX5T851ASTZ applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
