ZX3CD3S1M832TA

Bipolar Transistors - BJT PNP 40V/1A Sch Comb


  • Manufacturer: Diodes Incorporated
  • NO: 233-ZX3CD3S1M832TA
  • Package: 8-VDFN Exposed Pad
  • Datasheet: pdf
  • Stock: 1045
  • Description: Bipolar Transistors - BJT PNP 40V/1A Sch Comb(Kg)

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  • Delivery: Delivery
  • Payment: payment

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SPECIFICATIONS

Parameters
Base Part Number ZX3CD3S1M832
Pin Count 10
JESD-30 Code R-PQFP-F10
Qualification Status Not Qualified
Number of Elements 1
Polarity PNP
Element Configuration Single
Case Connection COLLECTOR
Power - Max 3W
Transistor Application SWITCHING
Gain Bandwidth Product 190MHz
Transistor Type PNP + Diode (Isolated)
Collector Emitter Voltage (VCEO) 370mV
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 1.5A 2V
Current - Collector Cutoff (Max) 25nA
Vce Saturation (Max) @ Ib, Ic 370mV @ 250mA, 2.5A
Collector Emitter Breakdown Voltage 40V
Transition Frequency 190MHz
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) -7.5V
Height 1mm
Length 3mm
Width 2mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-VDFN Exposed Pad
Number of Pins 832
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 10
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -20V
Max Power Dissipation 3W
Terminal Position QUAD
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating -3.5A
Time@Peak Reflow Temperature-Max (s) 40

In Stock

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