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ZX3CD1S1M832TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-ZX3CD1S1M832TA
- Package: -
- Datasheet:
- Stock: 8880
- Description: ZX3CD1S1M832TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Number of Pins | 832 |
| Transistor Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2002 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 10 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Max Operating Temperature | 125°C |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -12V |
| Max Power Dissipation | 3W |
| Terminal Position | QUAD |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -4A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 10 |
| JESD-30 Code | R-PQFP-F10 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Polarity | PNP |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 110MHz |
| Collector Emitter Voltage (VCEO) | 300mV |
| Max Collector Current | 4A |
| Collector Emitter Breakdown Voltage | 12V |
| Transition Frequency | 110MHz |
| Collector Emitter Saturation Voltage | -240mV |
| Max Breakdown Voltage | 12V |
| Collector Base Voltage (VCBO) | -20V |
| Emitter Base Voltage (VEBO) | -7.5V |
| DC Current Gain-Min (hFE) | 45 |
| Height | 1mm |
| Length | 3mm |
| Width | 2mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
ZX3CD1S1M832TA Overview
This system offers maximum design flexibility due to a collector emitter saturation voltage of -240mV.Keeping the emitter base voltage at -7.5V can result in a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-4A).There is a transition frequency of 110MHz in the part.Input voltage breakdown is available at 12V volts.Maximum collector currents can be below 4A volts.
ZX3CD1S1M832TA Features
a collector emitter saturation voltage of -240mV
the emitter base voltage is kept at -7.5V
the current rating of this device is -4A
a transition frequency of 110MHz
ZX3CD1S1M832TA Applications
There are a lot of Diodes Incorporated ZX3CD1S1M832TA applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
