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ZTX968 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-ZTX968
- Package: E-Line-3
- Datasheet:
- Stock: 4753
- Description: ZTX968 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 11 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | E-Line-3 |
| Number of Pins | 3 |
| Weight | 453.59237mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~200°C TJ |
| Packaging | Bulk |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -12V |
| Max Power Dissipation | 1.2W |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -4.5A |
| Frequency | 80MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.2W |
| Power - Max | 1.58W |
| Gain Bandwidth Product | 80MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 12V |
| Max Collector Current | 4.5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 500mA 1V |
| Current - Collector Cutoff (Max) | 50nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 200mA, 5A |
| Collector Emitter Breakdown Voltage | 12V |
| Transition Frequency | 80MHz |
| Collector Emitter Saturation Voltage | -50mV |
| Collector Base Voltage (VCBO) | 15V |
| Emitter Base Voltage (VEBO) | -6V |
| Continuous Collector Current | -4.5A |
| Height | 4.01mm |
| Length | 4.77mm |
| Width | 2.41mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
ZTX968 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 300 @ 500mA 1V.As it features a collector emitter saturation voltage of -50mV, it allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 200mA, 5A.Continuous collector voltages should be kept at -4.5A to achieve high efficiency.If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.This device has a current rating of -4.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 80MHz.Single BJT transistor is possible for the collector current to fall as low as 4.5A volts at Single BJT transistors maximum.
ZTX968 Features
the DC current gain for this device is 300 @ 500mA 1V
a collector emitter saturation voltage of -50mV
the vce saturation(Max) is 300mV @ 200mA, 5A
the emitter base voltage is kept at -6V
the current rating of this device is -4.5A
a transition frequency of 80MHz
ZTX968 Applications
There are a lot of Diodes Incorporated ZTX968 applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
