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ZTX857STZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-ZTX857STZ
- Package: E-Line-3, Formed Leads
- Datasheet:
- Stock: 4175
- Description: ZTX857STZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Lead Free | Lead Free |
| Factory Lead Time | 15 Weeks |
| Mount | Surface Mount, Through Hole |
| Mounting Type | Through Hole |
| Package / Case | E-Line-3, Formed Leads |
| Number of Pins | 3 |
| Weight | 453.59237mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~200°C TJ |
| Packaging | Tape & Box (TB) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Voltage - Rated DC | 300V |
| Max Power Dissipation | 1.2W |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 5A |
| Frequency | 80MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | ZTX857 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.2W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 80MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 300V |
| Max Collector Current | 3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA 10V |
| Current - Collector Cutoff (Max) | 1μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 600mA, 3A |
| Collector Emitter Breakdown Voltage | 300V |
| Transition Frequency | 80MHz |
| Collector Emitter Saturation Voltage | 250mV |
| Max Breakdown Voltage | 300V |
| Collector Base Voltage (VCBO) | 330V |
| Emitter Base Voltage (VEBO) | 6V |
| Continuous Collector Current | 3A |
| Height | 4.01mm |
| Length | 4.77mm |
| Width | 2.41mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
ZTX857STZ Description
ZTX857STZ developed by Diodes Incorporated is a type of bipolar junction transistor (BJT). It is a semiconductor device that controls the current. Its function is to amplify the weak signal into an electrical signal with a larger amplitude value, and it is also used as a non-contact switch. The three terminals are the base, collector, and emitter. It is characterized by better voltage gain, high current density, higher bandwidth, and stable performance at higher frequencies.
ZTX857STZ Features
Better voltage gain
High current density
Higher bandwidth
Stable performance at higher frequencies
ZTX857STZ Applications
Communication applications
