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ZTX857 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-ZTX857
- Package: E-Line-3
- Datasheet:
- Stock: 9653
- Description: ZTX857 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | E-Line-3 |
| Number of Pins | 3 |
| Weight | 453.59237mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~200°C TJ |
| Packaging | Bulk |
| Published | 2012 |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 300V |
| Max Power Dissipation | 1.2W |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 5A |
| Frequency | 80MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | ZTX857 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.2W |
| Gain Bandwidth Product | 80MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 300V |
| Max Collector Current | 3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA 10V |
| Current - Collector Cutoff (Max) | 50nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 600mA, 3A |
| Collector Emitter Breakdown Voltage | 300V |
| Transition Frequency | 80MHz |
| Collector Base Voltage (VCBO) | 330V |
| Emitter Base Voltage (VEBO) | 6V |
| Continuous Collector Current | 3A |
| Height | 4.01mm |
| Length | 4.77mm |
| Width | 2.41mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
ZTX857 Overview
In this device, the DC current gain is 100 @ 500mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Continuous collector voltages should be kept at 3A to achieve high efficiency.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 5A current rating.Parts of this part have transition frequencies of 80MHz.A maximum collector current of 3A volts can be achieved.
ZTX857 Features
the DC current gain for this device is 100 @ 500mA 10V
the vce saturation(Max) is 250mV @ 600mA, 3A
the emitter base voltage is kept at 6V
the current rating of this device is 5A
a transition frequency of 80MHz
ZTX857 Applications
There are a lot of Diodes Incorporated ZTX857 applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
