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ZTX855 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-ZTX855
- Package: E-Line-3
- Datasheet:
- Stock: 8975
- Description: ZTX855 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | E-Line-3 |
| Number of Pins | 3 |
| Weight | 453.59237mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~200°C TJ |
| Packaging | Bulk |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 150V |
| Max Power Dissipation | 1.2W |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 4A |
| Frequency | 90MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.2W |
| Gain Bandwidth Product | 90MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 150V |
| Max Collector Current | 4A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A 5V |
| Current - Collector Cutoff (Max) | 50nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 260mV @ 400mA, 4A |
| Collector Emitter Breakdown Voltage | 150V |
| Transition Frequency | 90MHz |
| Collector Emitter Saturation Voltage | 210mV |
| Collector Base Voltage (VCBO) | 250V |
| Emitter Base Voltage (VEBO) | 6V |
| Continuous Collector Current | 4A |
| Height | 4.01mm |
| Length | 4.77mm |
| Width | 2.41mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
ZTX855 Overview
In this device, the DC current gain is 100 @ 1A 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 210mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 260mV @ 400mA, 4A.A constant collector voltage of 4A is necessary for high efficiency.An emitter's base voltage can be kept at 6V to gain high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Parts of this part have transition frequencies of 90MHz.When collector current reaches its maximum, it can reach 4A volts.
ZTX855 Features
the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of 210mV
the vce saturation(Max) is 260mV @ 400mA, 4A
the emitter base voltage is kept at 6V
the current rating of this device is 4A
a transition frequency of 90MHz
ZTX855 Applications
There are a lot of Diodes Incorporated ZTX855 applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
