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ZTX851STZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-ZTX851STZ
- Package: E-Line-3, Formed Leads
- Datasheet:
- Stock: 9140
- Description: ZTX851STZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | E-Line-3, Formed Leads |
| Number of Pins | 3 |
| Weight | 453.59237mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~200°C TJ |
| Packaging | Tape & Box (TB) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Voltage - Rated DC | 60V |
| Max Power Dissipation | 1.2W |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 5A |
| Frequency | 130MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | ZTX851 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.2W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 130MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 2A 1V |
| Current - Collector Cutoff (Max) | 1μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 200mA, 5A |
| Collector Emitter Breakdown Voltage | 60V |
| Transition Frequency | 130MHz |
| Collector Emitter Saturation Voltage | 250mV |
| Max Breakdown Voltage | 60V |
| Collector Base Voltage (VCBO) | 150V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 75 |
| Continuous Collector Current | 5A |
| Height | 4.01mm |
| Length | 4.77mm |
| Width | 2.41mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
ZTX851STZ Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 2A 1V.The collector emitter saturation voltage is 250mV, which allows for maximum design flexibility.When VCE saturation is 250mV @ 200mA, 5A, transistor means Ic has reached transistors maximum value (saturated).A 5A continuous collector voltage is necessary to achieve high efficiency.The base voltage of the emitter can be kept at 6V to achieve high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 5A for this device.The part has a transition frequency of 130MHz.Breakdown input voltage is 60V volts.A maximum collector current of 5A volts can be achieved.
ZTX851STZ Features
the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 200mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is 5A
a transition frequency of 130MHz
ZTX851STZ Applications
There are a lot of Diodes Incorporated ZTX851STZ applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
