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ZTX849STOB datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-ZTX849STOB
- Package: E-Line-3, Formed Leads
- Datasheet:
- Stock: 2240
- Description: ZTX849STOB datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | E-Line-3, Formed Leads |
| Weight | 453.59237mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~200°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2016 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| HTS Code | 8541.29.00.75 |
| Voltage - Rated DC | 30V |
| Max Power Dissipation | 1.2W |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 5A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | ZTX849 |
| Pin Count | 3 |
| JESD-30 Code | R-PSIP-W3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 100MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 220mV |
| Max Collector Current | 5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A 1V |
| Current - Collector Cutoff (Max) | 50nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 220mV @ 200mA, 5A |
| Collector Emitter Breakdown Voltage | 30V |
| Transition Frequency | 100MHz |
| Collector Base Voltage (VCBO) | 80V |
| Emitter Base Voltage (VEBO) | 6V |
| Continuous Collector Current | 5A |
| Height | 4.01mm |
| Length | 4.77mm |
| Width | 2.41mm |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
ZTX849STOB Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 1A 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 220mV @ 200mA, 5A.Continuous collector voltages should be kept at 5A to achieve high efficiency.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 5A.100MHz is present in the transition frequency.Maximum collector currents can be below 5A volts.
ZTX849STOB Features
the DC current gain for this device is 100 @ 1A 1V
the vce saturation(Max) is 220mV @ 200mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is 5A
a transition frequency of 100MHz
ZTX849STOB Applications
There are a lot of Diodes Incorporated ZTX849STOB applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
