ZTX788B

ZTX788B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • NO: 233-ZTX788B
  • Package: E-Line-3
  • Datasheet: pdf
  • Stock: 6349
  • Description: ZTX788B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
DC Current Gain (hFE) (Min) @ Ic, Vce 500 @ 10mA 2V
Vce Saturation (Max) @ Ib, Ic 450mV @ 10mA, 2A
Transition Frequency 100MHz
Collector Emitter Saturation Voltage -500mV
Collector Base Voltage (VCBO) 15V
Emitter Base Voltage (VEBO) -5V
Continuous Collector Current -3A
Height 4.01mm
Length 4.77mm
Width 2.41mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Factory Lead Time 15 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Manufacturer Package Identifier E-Line
Operating Temperature -55°C~200°C TJ
Packaging Bulk
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -15V
Max Power Dissipation 1W
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Current Rating -3A
Frequency 100MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZTX788B
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 15V
Max Collector Current 3A

ZTX788B Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 500 @ 10mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 450mV @ 10mA, 2A.Single BJT transistor is recommended to keep the continuous collector voltage at -3A in order to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.The current rating of this fuse is -3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.A maximum collector current of 3A volts is possible.

ZTX788B Features


the DC current gain for this device is 500 @ 10mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 450mV @ 10mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 100MHz

ZTX788B Applications


There are a lot of Diodes Incorporated ZTX788B applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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