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ZTX751 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-ZTX751
- Package: E-Line-3
- Datasheet:
- Stock: 1918
- Description: ZTX751 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | E-Line-3 |
| Number of Pins | 3 |
| Weight | 453.59237mg |
| Transistor Element Material | SILICON |
| Manufacturer Package Identifier | E-Line |
| Operating Temperature | -55°C~200°C TJ |
| Packaging | Bulk |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -60V |
| Max Power Dissipation | 1W |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -2A |
| Frequency | 140MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | ZTX751 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1W |
| Gain Bandwidth Product | 140MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 2A |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Collector Emitter Breakdown Voltage | 60V |
| Transition Frequency | 140MHz |
| Collector Emitter Saturation Voltage | -280mV |
| Collector Base Voltage (VCBO) | 80V |
| Emitter Base Voltage (VEBO) | 5V |
| DC Current Gain-Min (hFE) | 40 |
| Continuous Collector Current | -2A |
| Height | 4.01mm |
| Length | 4.77mm |
| Width | 2.41mm |
| Radiation Hardening | No |
ZTX751 Overview
The collector emitter saturation voltage is -280mV, giving you a wide variety of design options.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 200mA, 2A.Single BJT transistor is recommended to keep the continuous collector voltage at -2A in order to achieve high efficiency.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 140MHz.A maximum collector current of 2A volts is possible.
ZTX751 Features
a collector emitter saturation voltage of -280mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 140MHz
ZTX751 Applications
There are a lot of Diodes Incorporated ZTX751 applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
