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ZTX688BSTZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-ZTX688BSTZ
- Package: E-Line-3, Formed Leads
- Datasheet:
- Stock: 9641
- Description: ZTX688BSTZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | E-Line-3, Formed Leads |
| Number of Pins | 3 |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Weight | 453.59237mg |
| Operating Temperature | -55°C~200°C TJ |
| Packaging | Tape & Box (TB) |
| Published | 2006 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | 12V |
| Max Power Dissipation | 1W |
| Current Rating | 3A |
| Frequency | 150MHz |
| Base Part Number | ZTX688B |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 1W |
| Power - Max | 1W |
| Gain Bandwidth Product | 150MHz |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 12V |
| Max Collector Current | 3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 500 @ 100mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 20mA, 3A |
| Collector Emitter Breakdown Voltage | 12V |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Current - Collector (Ic) (Max) | 3A |
| Max Frequency | 150MHz |
| Collector Emitter Saturation Voltage | 350mV |
| Frequency - Transition | 150MHz |
| Collector Base Voltage (VCBO) | 12V |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 3A |
| Height | 4.01mm |
| Length | 4.77mm |
| Width | 2.41mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
ZTX688BSTZ Overview
This device has a DC current gain of 500 @ 100mA 2V, which is the ratio between the collector current and the base current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 350mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In order to achieve high efficiency, the continuous collector voltage should be kept at 3A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Its current rating is 3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.This product comes in a E-Line (TO-92 compatible) device package from the supplier.There is a 12V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
ZTX688BSTZ Features
the DC current gain for this device is 500 @ 100mA 2V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 350mV @ 20mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
the supplier device package of E-Line (TO-92 compatible)
ZTX688BSTZ Applications
There are a lot of Diodes Incorporated ZTX688BSTZ applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
