ZTX688BSTOA

ZTX688BSTOA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • NO: 233-ZTX688BSTOA
  • Package: E-Line-3, Formed Leads
  • Datasheet: pdf
  • Stock: 6607
  • Description: ZTX688BSTOA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3, Formed Leads
Weight 453.59237mg
Transistor Element Material SILICON
Operating Temperature -55°C~200°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish MATTE TIN
HTS Code 8541.29.00.75
Voltage - Rated DC 12V
Max Power Dissipation 1W
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Current Rating 3A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZTX688B
Pin Count 3
JESD-30 Code R-PSIP-W3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Transistor Application SWITCHING
Gain Bandwidth Product 150MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 350mV
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 500 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 350mV @ 20mA, 3A
Collector Emitter Breakdown Voltage 12V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage 350mV
Collector Base Voltage (VCBO) 12V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 3A
Height 4.01mm
Length 4.77mm
Width 2.41mm
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

ZTX688BSTOA Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 500 @ 100mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 350mV, which allows maximum flexibilSingle BJT transistory in design.When VCE saturation is 350mV @ 20mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltages should be kept at 3A to achieve high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 3A current rating.Parts of this part have transition frequencies of 150MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.

ZTX688BSTOA Features


the DC current gain for this device is 500 @ 100mA 2V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 350mV @ 20mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 150MHz

ZTX688BSTOA Applications


There are a lot of Diodes Incorporated ZTX688BSTOA applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

In Stock

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