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ZTX658STZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-ZTX658STZ
- Package: E-Line-3, Formed Leads
- Datasheet:
- Stock: 5858
- Description: ZTX658STZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Base Part Number | ZTX658 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 50MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 400V |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 100mA 5V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 100mA |
| Collector Emitter Breakdown Voltage | 400V |
| Transition Frequency | 50MHz |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Base Voltage (VCBO) | 400V |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 500mA |
| Height | 4.01mm |
| Length | 4.77mm |
| Width | 2.41mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 15 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | E-Line-3, Formed Leads |
| Number of Pins | 3 |
| Weight | 453.59237mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~200°C TJ |
| Packaging | Tape & Box (TB) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| HTS Code | 8541.29.00.75 |
| Voltage - Rated DC | 400V |
| Max Power Dissipation | 1W |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 500mA |
| Time@Peak Reflow Temperature-Max (s) | 40 |
ZTX658STZ Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 50 @ 100mA 5V DC current gain.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.When VCE saturation is 500mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Maintaining the continuous collector voltage at 500mA is essential for high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (500mA).The part has a transition frequency of 50MHz.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
ZTX658STZ Features
the DC current gain for this device is 50 @ 100mA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 50MHz
ZTX658STZ Applications
There are a lot of Diodes Incorporated ZTX658STZ applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
