ZTX658

ZTX658 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • NO: 233-ZTX658
  • Package: E-Line-3
  • Datasheet: pdf
  • Stock: 2928
  • Description: ZTX658 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Manufacturer Package Identifier E-Line
Operating Temperature -55°C~200°C TJ
Packaging Bulk
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 400V
Max Power Dissipation 1W
Terminal Position BOTTOM
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Current Rating 500mA
Frequency 50MHz
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
Transistor Application SWITCHING
Gain Bandwidth Product 50MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
JEDEC-95 Code TO-92
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 400V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage 500mV
Collector Base Voltage (VCBO) 400V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 500mA
Height 4.01mm
Length 4.77mm
Width 2.41mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

ZTX658 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 50 @ 100mA 5V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 10mA, 100mA.Continuous collector voltages of 500mA should be maintained to achieve high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.50MHz is present in the transition frequency.A maximum collector current of 500mA volts can be achieved.

ZTX658 Features


the DC current gain for this device is 50 @ 100mA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 50MHz

ZTX658 Applications


There are a lot of Diodes Incorporated ZTX658 applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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