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ZTX653STOB datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-ZTX653STOB
- Package: E-Line-3, Formed Leads
- Datasheet:
- Stock: 3016
- Description: ZTX653STOB datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | E-Line-3, Formed Leads |
| Number of Pins | 3 |
| Weight | 453.59237mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~200°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | MATTE TIN |
| Voltage - Rated DC | 100V |
| Max Power Dissipation | 1W |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 2A |
| Frequency | 175MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | ZTX653 |
| Pin Count | 3 |
| Reference Standard | CECC |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 175MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 100V |
| Max Collector Current | 2A |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Collector Emitter Breakdown Voltage | 100V |
| Transition Frequency | 140MHz |
| Collector Base Voltage (VCBO) | 120V |
| Emitter Base Voltage (VEBO) | 5V |
| DC Current Gain-Min (hFE) | 25 |
| Continuous Collector Current | 2A |
| Height | 4.01mm |
| Length | 4.77mm |
| Width | 2.41mm |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
ZTX653STOB Description
ZTX653STOB is a 120V NPN silicon planar medium power transistor. Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high-frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.
ZTX653STOB Features
100 Volt VCEO
2 Amp continuous current
Low saturation voltage
Ptot=1 Watt
ZTX653STOB Applications
Automotive
Advanced driver assistance systems (ADAS)
Industrial
Building automation
Enterprise systems
Enterprise machine
