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ZTX651STOA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-ZTX651STOA
- Package: E-Line-3, Formed Leads
- Datasheet:
- Stock: 3038
- Description: ZTX651STOA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Continuous Collector Current | 2A |
| Height | 4.95mm |
| Length | 4.95mm |
| Width | 3.94mm |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | E-Line-3, Formed Leads |
| Weight | 453.59237mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~200°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | MATTE TIN |
| HTS Code | 8541.29.00.75 |
| Voltage - Rated DC | 60V |
| Max Power Dissipation | 1W |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | unknown |
| Current Rating | 2A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | ZTX651 |
| Pin Count | 3 |
| Reference Standard | CECC |
| JESD-30 Code | R-PSIP-W3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 175MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 500mV |
| Max Collector Current | 2A |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Collector Emitter Breakdown Voltage | 60V |
| Transition Frequency | 140MHz |
| Collector Emitter Saturation Voltage | 230mV |
| Collector Base Voltage (VCBO) | 80V |
| Emitter Base Voltage (VEBO) | 5V |
| DC Current Gain-Min (hFE) | 40 |
ZTX651STOA Overview
The collector emitter saturation voltage is 230mV, giving you a wide variety of design options.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 200mA, 2A.Continuous collector voltages should be kept at 2A to achieve high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Its current rating is 2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 140MHz.When collector current reaches its maximum, it can reach 2A volts.
ZTX651STOA Features
a collector emitter saturation voltage of 230mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 140MHz
ZTX651STOA Applications
There are a lot of Diodes Incorporated ZTX651STOA applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
