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ZTX614STZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-ZTX614STZ
- Package: E-Line-3, Formed Leads
- Datasheet:
- Stock: 2123
- Description: ZTX614STZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Transistor Application | SWITCHING |
| Transistor Type | NPN - Darlington |
| Collector Emitter Voltage (VCEO) | 100V |
| Max Collector Current | 800mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10000 @ 500mA 5V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1.25V @ 8mA, 800mA |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1.25V |
| Collector Base Voltage (VCBO) | 120V |
| Emitter Base Voltage (VEBO) | 10V |
| Continuous Collector Current | 800mA |
| Height | 4.01mm |
| Length | 4.77mm |
| Width | 2.41mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 15 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | E-Line-3, Formed Leads |
| Number of Pins | 3 |
| Weight | 453.59237mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~200°C TJ |
| Packaging | Tape & Box (TB) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Voltage - Rated DC | 100V |
| Max Power Dissipation | 1W |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 800mA |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | ZTX614 |
| Pin Count | 3 |
ZTX614STZ Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 10000 @ 500mA 5V.A collector emitter saturation voltage of 1.25V allows maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.25V @ 8mA, 800mA.Continuous collector voltages of 800mA should be maintained to achieve high efficiency.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 800mA.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
ZTX614STZ Features
the DC current gain for this device is 10000 @ 500mA 5V
a collector emitter saturation voltage of 1.25V
the vce saturation(Max) is 1.25V @ 8mA, 800mA
the emitter base voltage is kept at 10V
the current rating of this device is 800mA
ZTX614STZ Applications
There are a lot of Diodes Incorporated ZTX614STZ applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
